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![](/forums/images/ca_evo_db/misc/spacer.gif) | NE5521 DATASHEET | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
NE5521 | LVDT signal conditioner | NXP Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
![](/forums/images/ca_evo_db/misc/spacer.gif) | *NE552*: Расширенные результаты | ![](/forums/images/ca_evo_db/misc/spacer.gif) |
Компонент | Описание | Производитель | PDF | Buy |
NE5520279A | NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET | NEC | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5520279A | 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5520279A-T1 | NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET | NEC | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5520279A-T1-A | 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5520379A | NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5520379A-T1A-A | NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5521 | LVDT signal conditioner | NXP Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5521D | LVDT signal conditioner | NXP Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE5521N | LVDT signal conditioner | NXP Semiconductors | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE552R479A | NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE552R479A-T1A-A | NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET | California Eastern Labs | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE552R679A | 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS | NEC | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE552R679A-T1 | 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS | NEC | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
NE552R679A-T1A | 3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS | NEC | ![](/images/pdf_icon.png) | ![](/images/alisearch.png) |
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