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| W6NXD0K-0000 DATASHEET | |
| Компонент | Описание | Производитель | PDF | Buy |
W6NXD0K-0000 | Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc |  |  |
| *W6N*: Расширенные результаты | |
| Компонент | Описание | Производитель | PDF | Buy |
| UMW6N | High transition frequency (dual transistors) | Rohm | | |
| UMW6N | High transition frequency (dual transistors) | Rohm | | |
| MTW6N100 | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM | Motorola, Inc | | |
| MTW6N100E | TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM | Motorola, Inc | | |
| MTW6N60E | Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate | Motorola, Inc | | |
| SGW6N60UF | Ultra-Fast IGBT | Fairchild Semiconductor | | |
| SGW6N60UFD | Ultra-Fast IGBT | Fairchild Semiconductor | | |
| SW6N65 | N-channel MOSFET | Xian Semipower Electronic Technology Co., Ltd. | | |
| STW6NA80 | N - CHANNEL 800V - 1.8ohm - 5.4A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR | STMicroelectronics | | |
| STW6NA90 | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | STMicroelectronics | | |
| STW6NB100 | N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET | STMicroelectronics | | |
| STW6NB90 | N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET | STMicroelectronics | | |
| STW6NC90 | N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESHIII MOSFET | STMicroelectronics | | |
| STW6NC90Z | N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESHIII MOSFET | STMicroelectronics | | |
| STW6NK70Z | N-channel 700V - 1.5Y - 5A - TO-220/TO-220FP Zener-protected SuperMESH Power MOSFET | STMicroelectronics | | |
| T6W6NR-F | High Voltage Paper-Film/Foil Capacitors | Cornell Dubilier Electronics | | |
| T10W6NR-F | High Voltage Paper-Film/Foil Capacitors | Cornell Dubilier Electronics | | |
| T15W6NR-F | High Voltage Paper-Film/Foil Capacitors | Cornell Dubilier Electronics | | |
| T30W6NR-F | High Voltage Paper-Film/Foil Capacitors | Cornell Dubilier Electronics | | |
| W6NRD0X-0000 | Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition | Cree, Inc | | |
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